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Mochel, J.M. La Madrid, Marissa Alisangco 2011-06-01T16:08:32Z 2011-06-01T16:08:32Z 10000-01-01 1990 Measurements of the electron-phonon relaxation time are carried out, using both a direct and indirect method, in three dimensional films of Cl-xCUx and Si1-xAUx in the temperature range 0.3K-4K. The electron-phonon resistance and thermal boundary resistance are also measured. The directly measured relaxation times for C1-zCUz can agree with theoretical predictions if a longitudinal sound speed similar to that of graphite and a longitudinal to transverse speed ratio similar to that of silicate glasses are used. The results for the Sh-zAUz only qualitatively agree with theory. The measured thermal resistances are in reasonable agreement with other experiments. Comparison of the direct and indirect measurements of the relaxation times reveal that the specific heat coefficient, behaves approximately like T-.6 in Cl-zCUz below lK, in qualitative agreement with current theories describing the behavior of disordered, interacting electrons near the metal-insulator transition. Legacy dissertation U of I Only 3480361 http://hdl.handle.net/2142/25206 eng Copyright 1990 owned by Marissa Alisangco La Madrid thermodynamics metal-insulator transition electron-phonon relaxation time three dimensional films thermal boundary resistance Thermodynamics of disordered C1-xCux and Si1-xAux near the metal-insulator transition text Dissertation / Thesis https://hdl.handle.net/2142/21613 Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.