<?xml version="1.0" encoding="UTF-8"?>
<?xml-stylesheet type="text/xsl" href="/oai-pmh.xsl"?>
<OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd">
  <responseDate>2026-09-20T16:16:19Z</responseDate>
  <request identifier="oai:www.ideals.illinois.edu:2142/25224" metadataPrefix="etdms" verb="GetRecord">https://www.ideals.illinois.edu/oai-pmh</request>
  <GetRecord>
    <record>
      <header>
        <identifier>oai:www.ideals.illinois.edu:2142/25224</identifier>
        <datestamp>2023-07-10</datestamp>
        <setSpec>col_2142_8859</setSpec>
        <setSpec>col_2142_5131</setSpec>
        <setSpec>com_2142_8858</setSpec>
        <setSpec>com_2142_234</setSpec>
        <setSpec>com_2142_5130</setSpec>
      </header>
      <metadata>
        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:language>en</dc:language>
          <dc:rights>1987 Ward Lewis Johnson</dc:rights>
          <dc:subject>ultrasonic waves</dc:subject>
          <dc:subject>point defects in crystals</dc:subject>
          <dc:subject>electron-irradiated P-type silicon</dc:subject>
          <dc:title>An ultrasonic study of point defects in electron-irradiated P-type silicon</dc:title>
          <dc:type>Dissertation / Thesis</dc:type>
          <dc:type>text</dc:type>
          <dc:contributor>Granato, A.V.</dc:contributor>
          <dc:creator>Johnson, Ward Lewis</dc:creator>
          <dc:date>2011-06-02T16:48:07Z</dc:date>
          <dc:date>2011-06-02T16:48:07Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1987</dc:date>
          <dc:description>The mechanisms of interaction of ultrasonic waves with point defects in
crystals are reviewed and a perturbation approach is introduced which leads to
general expressions for the resonance and relaxation strengths in terms of
matrix elements of the ultrasonic perturbation. These expressions provide the
basis for a discussion of the polarization dependence of resonance and
relaxation. Selection rules for cubic crystals are presented.
An exploratory ultrasonic study is performed on electron-irradiated Bdoped
and Al-doped silicon. Neutral substitutional boron is detected before
irradiation, as expected from previous ultrasonic studies on unirradiated
silicon. This defect produces both resonance and relaxation. Similar effects
are observed for substitutional aluminum. After irradiation, a relaxation is
observed when the sample is exposed to 0.18-0.39 eV light. By comparison with
previous EPR results, this relaxation is identified as the singly positively
charged state of the vacancy, v+. Preliminary results on the relaxation time
and strength of v+ suggest that it may have several populated vibronic levels.
Another relaxation is observed in irradiated Al-doped silicon when the sample
is exposed to white light. From its annealing behavior and dopant dependence,
we identify it as a non-equilibrium charge state of interstitial aluminum. The
most likely states appear to be Ali 0 and Ali-. Analysis of the polarization
dependence of the relaxation leads to the conclusion that the aluminum atom
rests at a Td interstitial site and the surrounding lattice is Jahn-Teller
distorted with e-type (tetragonal or &lt;100&gt; orthorhombic) symmetry.</dc:description>
          <dc:description>Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T16:48:07Z
No. of bitstreams: 1
1987_Johnson.pdf: 2194738 bytes, checksum: dcf1616b18341b11851e0b9d2b9c92d4 (MD5)</dc:description>
          <dc:description>Made available in DSpace on 2011-06-02T16:48:07Z (GMT). No. of bitstreams: 1
1987_Johnson.pdf: 2194738 bytes, checksum: dcf1616b18341b11851e0b9d2b9c92d4 (MD5)
  Previous issue date: 1987</dc:description>
          <dc:description>Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-02T16:48:07Z
Item is restricted indefinitely.</dc:description>
          <dc:description>Restriction data tranferred 2014-07-01T11:12:41-05:00
Original Data
Group with Access UIUC Users [automated]
Release Date: none
Reason: Thesis</dc:description>
          <dc:description>Thesis</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:identifier>1411696</dc:identifier>
          <dc:identifier>http://hdl.handle.net/2142/25224</dc:identifier>
          <degree>
            <disciplineCode>University of Illinois at Urbana-Champaign</disciplineCode>
            <department>Physics</department>
            <discipline>Physics</discipline>
            <level>Dissertation</level>
            <name>Ph.D.</name>
          </degree>
        </thesis>
      </metadata>
    </record>
  </GetRecord>
</OAI-PMH>
