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Weissman, Michael B. Black, Robert Douglas 2011-06-07T16:40:37Z 2011-06-07T16:40:37Z 10000-01-01 1984 The nature of l/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise and resistivity noise are presented. Results bearing on the Gaussian nature and the spatial coherence of l/f noise are also given. The discovery of thermally activated spectral features in the noise from silicon-on-sapphire (SOS) samples is documented. A model for the origin of l/f noise in SOS and one for that in bismuth are described. Possible generalizations of these findings are commented on. Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-07T16:40:37Z No. of bitstreams: 1 1984_black.pdf: 5458670 bytes, checksum: 27d48bd3ca35fc64e6b263b5651c69c3 (MD5) Made available in DSpace on 2011-06-07T16:40:37Z (GMT). No. of bitstreams: 1 1984_black.pdf: 5458670 bytes, checksum: 27d48bd3ca35fc64e6b263b5651c69c3 (MD5) Previous issue date: 1984 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-07T16:40:37Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:14:53-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Thesis U of I Only 810373 http://hdl.handle.net/2142/25337 en Copyright 1984 Robert Douglas Black 1/f noise semiconductors metals instantaneous resistivity flucturation isotropy Hall noise resistivity noise 1/f noise in semiconductors and metals Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.