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Sah, C.T. Stivers, Alan Randolph 2011-06-27T14:50:54Z 2011-06-27T14:50:54Z 10000-01-01 1979 Meta1-oxide-semiconductor capacitors were fabricated with 2800 A thick dry grown thermal oxides under various conditions to determine the effects of oxidation parameters on oxide charge trapping. Electrons and holes were injected into the oxides by the VUV-bias method. In this method, electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or holes are injected by applying the appropriate voltage to the gate. The charge trapped at the interface was measured by the capacitance-voltage method and located by the photocurrent-voltage method. The trapped charge was found to be within 100 A of the interface. Trapping kinetics data revealed neutral, donor-like, hole traps with capture cross sections of 6xlO-14cm2 and lxlO-15cm2. In addition, an acceptor-like electron trap with a capture cross section of lxlO-15cm2 was detected in three devices. These traps, after being positively charged by hole capture were efficient electron traps with a capture cross section of 3xlO-13cm2 • Little increase in interface states was observed as a result of trap charging. The annealing behavior of the oxide traps support the model that equates trivalent silicon with the trap with the larger hole capture cross section and non-bridging oxygen with the trap with the smaller hole capture cross section. An analysis of the annealing kinetics is given. Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-27T14:50:54Z No. of bitstreams: 1 1979_stivers.pdf: 5369286 bytes, checksum: c8c34bb288e2f7e49a897c30b5993464 (MD5) Made available in DSpace on 2011-06-27T14:50:54Z (GMT). No. of bitstreams: 1 1979_stivers.pdf: 5369286 bytes, checksum: c8c34bb288e2f7e49a897c30b5993464 (MD5) Previous issue date: 1979 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-06-27T14:50:54Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:32:22-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Thesis U of I Only 409214 http://hdl.handle.net/2142/25528 en 1979 Alan Randolph Stivers oxide charge traps interface states silicon-silicon dioxide interface metal-oxide-semiconductors dry grown thermal oxides charge trapping Oxide charge traps and interface states at the silicon-silicon dioxide interface Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.