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Handler, Paul Blossey, Daniel Fahnestock 2011-07-12T18:35:39Z 2011-07-12T18:35:39Z 10000-01-01 1969 The effect of an electric field on exciton oscillator strengths is calculated for both bound and continuum states. The calculation is performed for Wannier excitons using the effective~mass approximation at both the Mo and M3 type edges. In comparison with single-particle theory, the inclusion of the electron-hole interaction increases the oscillator strengths at the Mo edge and at the same time enhances and shifts the Franz-Keldysh type oscillations near the edge. The effect of the electron-hole interaction on the M3 edge is to decrease the oscillator strengths and the amplitude of the Franz-Ke1dysh type oscillations near the edge. It is also shown that, for small electric fields, the splittings and shifts of the bound states with electric field are in accordance with the well known perturbation treatment of the Stark effect. Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-12T18:35:39Z No. of bitstreams: 1 1969_blossey.pdf: 2860115 bytes, checksum: a8468e900538e9a377b582a48b16c46c (MD5) Made available in DSpace on 2011-07-12T18:35:39Z (GMT). No. of bitstreams: 1 1969_blossey.pdf: 2860115 bytes, checksum: a8468e900538e9a377b582a48b16c46c (MD5) Previous issue date: 1969 Restriction data tranferred 2014-07-01T11:32:54-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-12T18:35:39Z Item is restricted indefinitely. Thesis U of I Only 6074385 http://hdl.handle.net/2142/25783 en 1969 Daniel Fahnestock Blossey electric field effects optical absorption by excitons semiconductors exciton oscillator strengths Electric field effects on optical absorption by excitons in semiconductors Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.