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        <identifier>oai:www.ideals.illinois.edu:2142/25790</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Ginsberg, D.M.</dc:contributor>
          <dc:creator>Harris, Richard Elgin</dc:creator>
          <dc:date>2011-07-13T15:15:58Z</dc:date>
          <dc:date>2011-07-13T15:15:58Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1969</dc:date>
          <dc:description>The ratio Ts /Tn of the far infrared radiation transmitted
through a thin film in the superconducting state to that transmitted
through it in the normal state has been measured for several samples of
amorphous bismuth and gallium. The transition temperature Tc of each film
was also measured. Thicknesses were approximately in the range 50 to 200 ~.
Numerical calculations based on the strong-coupling theory of superconductivity
and on tunneling data produced theoretical values of Ts /Tn for
comparison with the data, showing moderately good agreement. For each
sample the energy gap 2wg was determined. For bismuth and gallium, Tc and
2wg decrease with increasing film resistance. It was also noted that for
both materials, the abrupt resistance change at about 15 K, characteristic
of thicker amorphous films, appeared instead as a gradual change in
resistance beginning at temperatures higher than 20 K.</dc:description>
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  Previous issue date: 1969</dc:description>
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Item is restricted indefinitely.</dc:description>
          <dc:description>Restriction data tranferred 2014-07-01T11:33:07-05:00
Original Data
Group with Access UIUC Users [automated]
Release Date: none
Reason: Thesis</dc:description>
          <dc:description>Thesis</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:identifier>6074596</dc:identifier>
          <dc:identifier>http://hdl.handle.net/2142/25790</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>1969 Richard Elgin Harris</dc:rights>
          <dc:subject>far infrared radiation</dc:subject>
          <dc:subject>superconducting thin films</dc:subject>
          <dc:subject>amorphous bismuth</dc:subject>
          <dc:subject>amorphous gallium</dc:subject>
          <dc:title>Transmission of far infrared radiation through thin films of superconducting amorphous bismuth and gallium</dc:title>
          <dc:type>Dissertation / Thesis</dc:type>
          <dc:type>text</dc:type>
          <degree>
            <department>Physics</department>
            <discipline>Physics</discipline>
            <disciplineCode>University of Illinois at Urbana-Champaign</disciplineCode>
            <level>Dissertation</level>
            <name>Ph.D.</name>
          </degree>
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