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Compton, W.D. Cullen, Donald E. 2011-07-14T14:37:31Z 2011-07-14T14:37:31Z 10000-01-01 1970 Tunneling in boron doped p-type silicon metal-semiconductor and metal-insulator-semiconductor tunnel junctions has been studied at low temperatures by measuring the derivatives, di/dV and d2i/dV2, of the current-voltage characteristics as functions of applied bias voltage V. The junctions were prepared by evaporating metal contacts onto vacuum and air cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone center optical phonons and boron local-mode phonons has been observed. The optical phonon lineshapes in the most heavily doped MIS units are shown to compare well with the theoretical line shapes in which modifications in the bulk semiconductor states arising from electron-optical phonon interactions in the semiconductor electrode have been included. Anomalous zero-bias conductance minima were observed in the tunneling characteristics of the silicon MS junctions. At least a part of this structure is attributed to intermediate state tunneling whereby electrons tunnel from one electrode to the other in two steps via intermediate states localized in the depletion region of the semiconductor. The source of the remaining structure is not known. Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-14T14:37:31Z No. of bitstreams: 1 1970_cullen.pdf: 6745271 bytes, checksum: 9c26fe5bbfc8b57636eae451e112100b (MD5) Made available in DSpace on 2011-07-14T14:37:31Z (GMT). No. of bitstreams: 1 1970_cullen.pdf: 6745271 bytes, checksum: 9c26fe5bbfc8b57636eae451e112100b (MD5) Previous issue date: 1970 Restriction data tranferred 2014-07-01T11:33:19-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-14T14:37:31Z Item is restricted indefinitely. Thesis U of I Only 6059317 http://hdl.handle.net/2142/25807 en 1970 Donald Edward Cullen tunneling spectroscopy p-type silicon boron doped silicon metal semiconductor metal insulator semiconductor Tunneling spectroscopy in p-type silicon Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.