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Koehler, James S. Hyatt, William D. 2011-07-26T19:14:26Z 2011-07-26T19:14:26Z 10000-01-01 1970 N-type germanium (4.X 1014 Sb/cm3) has been irradiated with 1.1 MeV electrons at SOK. The defects produced have been studied by measuring the voltage-dependent capacitance of a metal-germanium junction formed at the surface of a germanium sample. These measurements were made at lOoK and directly gave the fixed charge density near the surface of the sample. The production and recovery of defects seen near the surface is the same.as seen in bulk experiments. A 0.5 MeV electron beam was used to cause radiation annealing of the defects at 5OK. The fraction recovered during radiation annealing is directly proportional to Jt. A model based on diffusion-limited recovery theory is used to explain these results. This model is also used to discuss the results of previous·experiments. The temperature dependence of the observed recovery at 5OKgave a defect migration energy of 0.0044 ± 0.0008 eVe Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-07-26T19:14:26Z No. of bitstreams: 1 1970_hyatt.pdf: 2271289 bytes, checksum: d64b2838e772ba21d6634bb82b3cc8ad (MD5) Made available in DSpace on 2011-07-26T19:14:26Z (GMT). No. of bitstreams: 1 1970_hyatt.pdf: 2271289 bytes, checksum: d64b2838e772ba21d6634bb82b3cc8ad (MD5) Previous issue date: 1970 Restriction data tranferred 2014-07-01T11:33:09-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carolyn Mead (cmead2@illinois.edu) on 2011-07-26T19:14:27Z Item is restricted indefinitely. Thesis U of I Only 6054223 http://hdl.handle.net/2142/25844 en 1970 William D. Hyatt low temperature annealing electron irradiated germanium n-type germanium Low temperature annealing of electron irradiated germanium Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.