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Nayfeh, Munir H. Archer, Allan P. 2011-11-08T22:29:36Z 2011-11-08T22:29:36Z 10000-01-01 2001 We present here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of the STM is varied. We focus here on that subset of field stress parameters yielding structures which specifically exhibit this conductivity change. Submitted by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-08T22:29:36Z No. of bitstreams: 1 2001_archer.pdf: 3056963 bytes, checksum: 9aec13a3096d027a6c23ba25c41ecd02 (MD5) Made available in DSpace on 2011-11-08T22:29:36Z (GMT). No. of bitstreams: 1 2001_archer.pdf: 3056963 bytes, checksum: 9aec13a3096d027a6c23ba25c41ecd02 (MD5) Previous issue date: 2001 Restriction data tranferred 2014-07-01T11:33:45-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Disseration/Thesis Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-08T22:29:36Z Item is restricted indefinitely. Disseration/Thesis U of I Only http://hdl.handle.net/2142/28333 en © 2001 Allan P. Archer silicon dioxide Studies of Field-Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.