2026-09-21T10:01:12Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/29484 2023-07-10 col_2142_8888 col_2142_5131 com_2142_8887 com_2142_234 com_2142_5130

Feng, Milton Feng, Milton Rosenbaum, Elyse Jin, Jianming Schutt-Ainé, José E. Stuenkel, Mark E. 2012-02-01T00:48:46Z 2012-02-01T00:48:46Z 2014-02-01T11:00:30Z 2012-02-01T00:48:46Z 2011-12 The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly desirable device for both millimeter-wave and high-speed mixed-signal circuits. However, as the complexity of the circuits that can be realized with DHBTs increases, new compact large-signal models are needed to properly model the physical operation of these devices, because current models are based on older homojunction bipolar technology. A physically scalable DHBT model, the UIUC SDD2, is developed specifically for DHBT technology and shown to outperform the often-used VBIC model in both individual device modeling and full circuit simulation. Additionally, tunable clock generator and frequency synthesizer circuits implemented in an indium phosphide (InP) DHBT technology are designed, fabricated, and measured to show the ability of this technology to implement fully integrated sources with moderate power dissipation at millimeter-wave frequencies. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-08-29T13:56:23Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Stuenkel_Mark.pdf: 1719778 bytes, checksum: 141e00adc4601643403b096f3243ff6c (MD5) Made available in DSpace on 2012-02-01T00:48:46Z (GMT). No. of bitstreams: 2 Stuenkel_Mark.pdf: 1770129 bytes, checksum: 60880beb054cb5c8c3df37703978b6fe (MD5) license.txt: 4063 bytes, checksum: eb9fc51f66af5d03adf20ab31717d743 (MD5) Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2012-02-01T00:50:41Z Item is restricted until 2014-02-01T00:50:07Z Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2014-02-01T11:00:30Z Item was in collections: Dissertations and Theses - Electrical and Computer Engineering (ID: 446) Graduate Theses and Dissertations at Illinois (ID: 204) No. of bitstreams: 3 Stuenkel_Mark.pdf.txt: 116777 bytes, checksum: 63d804a1dff770cca752677fe74e9e33 (MD5) Stuenkel_Mark.pdf: 1770129 bytes, checksum: 60880beb054cb5c8c3df37703978b6fe (MD5) license.txt: 4063 bytes, checksum: eb9fc51f66af5d03adf20ab31717d743 (MD5) Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2014-02-01T11:00:30Z http://hdl.handle.net/2142/29484 en Copyright 2011 Mark Eric Stuenkel double heterojunction bipolar transistor (DHBT) Modeling Oscillator Millimeter-Wave Compact device modeling and millimeter-wave oscillator design for III-V HBT technology Electrical & Computer Eng 1933 Electrical Engineering 0115 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electrical Engineerg -UIUC 10KS0115PHD