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        <identifier>oai:www.ideals.illinois.edu:2142/29653</identifier>
        <datestamp>2023-07-10</datestamp>
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          <dc:contributor>Pop, Eric</dc:contributor>
          <dc:creator>Lyons, Austin</dc:creator>
          <dc:date>2012-02-06T20:08:58Z</dc:date>
          <dc:date>2012-02-06T20:08:58Z</dc:date>
          <dc:date>2011-12</dc:date>
          <dc:date>2012-02-06T20:08:58Z</dc:date>
          <dc:date>2011-12</dc:date>
          <dc:description>We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width &lt; ~50 nm and length &lt; ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.</dc:description>
          <dc:description>Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-12-08T14:54:20Z
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University of Illinois Theses &amp; Dissertations (ID: 1)
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          <dc:identifier>http://hdl.handle.net/2142/29653</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2011 Austin Lyons</dc:rights>
          <dc:subject>graphene</dc:subject>
          <dc:subject>nanoribbons</dc:subject>
          <dc:subject>chemical vapor deposition (CVD)</dc:subject>
          <dc:subject>current density</dc:subject>
          <dc:subject>interconnects</dc:subject>
          <dc:subject>breakdown</dc:subject>
          <dc:subject>mobility</dc:subject>
          <dc:subject>transistors</dc:subject>
          <dc:subject>chemical vapor deposition</dc:subject>
          <dc:title>Properties of graphene nanoribbons obtained by chemical vapor deposition</dc:title>
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            <department>Electrical &amp; Computer Eng</department>
            <departmentCode>1933</departmentCode>
            <discipline>Electrical &amp; Computer Engr</discipline>
            <disciplineCode>1200</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
            <program>MS:Electr &amp; Computer Eng-UIUC</program>
            <programCode>10KS1200MS</programCode>
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