2026-09-20T20:45:35Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/29761 2023-07-10 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Eden, James G. Houlahan, Thomas 2012-02-06T20:14:58Z 2012-02-06T20:14:58Z 2011-12 2012-02-06T20:14:58Z 2011-12 Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2011-12-06T18:46:26Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Houlahan_Thomas.pdf: 2037065 bytes, checksum: ce625f46ca6e93e71700e6a5ce66f766 (MD5) Made available in DSpace on 2012-02-06T20:14:58Z (GMT). No. of bitstreams: 2 Houlahan_Thomas.pdf: 2037065 bytes, checksum: ce625f46ca6e93e71700e6a5ce66f766 (MD5) license.txt: 4065 bytes, checksum: 085ee1f0f3607c9a3f5c24f66dc51602 (MD5) http://hdl.handle.net/2142/29761 en (c) 2011 Thomas J. Houlahan Jr. plasma bipolar junction transistor sheath Observation of plasma sheath modulation in the plasma bipolar junction transistor Dissertation / Thesis text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS