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Cooper, S. Lance Dua, Praveen 2012-04-19T21:10:10Z 2012-04-19T21:10:10Z 10000-01-01 1997 A host of optical techniques have been utilized to carefully study the quantum wires grown via strain induced lateral ordering (SILO) which is a bulk thermodynamics driven self-ordering process. Fourier transform photoluminescence (FTPL) measurements have been employed to study the polarization anisotropy in the emission from these structures. Photoluminescence power dependence and photoluminescence excitation spectroscopy is used along with the FTPL results to confirm the formation of quantum wires by the SILO process and to assess the presence of strain and the extent of Cu-Pt type ordering in these multiple quantum wire arrays. Evolution of the entire luminescence band after excitation is studied with the time-resolved photoluminescence measurements. The interface defect density in SILO wires is found to be considerably smaller than that of the wires fabricated with conventional techniques. Recombination is dominated by exciton recombination up to the room temperature. Carrier relaxation in quantum wires is studied for the intermediate temperature range. A characterization technique is developed to estimate the extent and shape of the spontaneously created composition modulation. The technique, based on resonant Raman spectroscopy, is general and can be utilized to map out composition regions in any semiconductor microstructure. Computer simulations were performed to confirm the validity of this technique. Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-19T21:10:10Z No. of bitstreams: 1 1997_dua.pdf: 5750554 bytes, checksum: 4368b19cbc461d7997c32ac8893c32d8 (MD5) Made available in DSpace on 2012-04-19T21:10:10Z (GMT). No. of bitstreams: 1 1997_dua.pdf: 5750554 bytes, checksum: 4368b19cbc461d7997c32ac8893c32d8 (MD5) Previous issue date: 1997 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Weathers (weathrs2@illinois.edu) on 2012-04-19T21:10:10Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:34:51-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Thesis U of I Only http://hdl.handle.net/2142/30696 4040176 en ©1997 Dua quantum wires strain induced lateral ordering Optical studies of III-V quantum wires grown by strain induced lateral ordering (SILO) process Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.