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Gibson, J. Murray Chen, Xidong 2012-04-26T22:31:26Z 2012-04-26T22:31:26Z 10000-01-01 1997 The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor field effect transistor devices, which dominate contemporary integrated circuit technology. There have been intense efforts to study this system due to its importance. In this work, a new transmission electron microscope technique has been developed to study the interface roughness of Si/Si02 Interfaces between Si and furnace grown Si02 layers can be unambiguously imaged with this technique, hence rich information on interface roughness can be obtained. The basic principle and related issues of this technique are discussed. The main character of random roughness is also reviewed. With this technique, the effect of post -oxidation annealing on Si(l00)/Si02 and Si(lll)/Si02 interface roughness has been investigated. It was found that as grown ~6mm thick silicon(lOO) dioxides generate a very high roughness (σ ~ 10- 15A). However, this roughness can be removed by short annealing in nitrogen at the growth temperature of 900° C. A growth model for silicon oxidation is proposed to understand this dramatic effect of postoxidation annealing at the unusually low temperature of 900° C. Roughness parameters such as correlation length and root-mean-square roughness are related to oxidation rate and diffusion constant in this model. The effect of chemical processing on the starting surface of silicon was also studied. Other related issues such as imaging processing, the Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-26T22:31:26Z No. of bitstreams: 1 1997_chen.pdf: 3823654 bytes, checksum: e65e35708ab6f44d96a2bf15bb5ad09f (MD5) Made available in DSpace on 2012-04-26T22:31:26Z (GMT). No. of bitstreams: 1 1997_chen.pdf: 3823654 bytes, checksum: e65e35708ab6f44d96a2bf15bb5ad09f (MD5) Previous issue date: 1997 Restriction data tranferred 2014-07-01T11:33:03-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Weathers (weathrs2@illinois.edu) on 2012-04-26T22:31:26Z Item is restricted indefinitely. Thesis U of I Only http://hdl.handle.net/2142/30775 4055727 en ©1997 Chen interface roughness Si/SiO2 metal-oxidesemiconductor field effect transistor integrated circuits post -oxidation annealing Si(l00)/Si02 Si(lll)/Si02 The Si/SiO2 Interface Roughness Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.