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4591826 http://hdl.handle.net/2142/30832 en Copyright by William Joseph McMahon, 2002 mosfet Statistical Model Reliability Semiconductor Atomic Scale Statistical Models of Semiconductor Device Degradation Dissertation / Thesis text Hess, Karl McMahon, William Joseph 2012-05-10T16:54:15Z 2012-05-10T16:54:15Z 10000-01-01 2002 We have developed a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation by electronic excitation for both the interface and scanning tunneling microscope induced siliconhydrogen bond-breaking on the silicon surface. We demonstrate the distribution of silicon-hydrogen bond energies as the physical origin for the sub linear time dependence of the generation of siliconsilicon dioxide interface traps under hot electron stress. We demonstrate the consequences of this idea for the reliability of MOSFET devices under hot electron stress, and point out that one must interpret the shape of the wearout portion of the failure function of all intrinsic MOSFET failure processes as due to a combination of bond energy distributions, geometric effects (i.e. percolation pathways for time-dependent dielectric breakdown of the silicon dioxide), and feedback effects. The bond energy distribution has severe consequences for all failure modes that take place either in the oxide or at an interface for devices where the defects required for failure are on the order of tens. These consequences increase enormously as the required defects for failure decrease. For interface trap generation, feedback effects and geometric effects are small so we are able to derive an approximate analytic form for the failure function, and demonstrate these consequences. Finally, we introduce a multiple-carrier model for the breaking of silicon-hydrogen bonds at the interface. This model allows us to explain a variety of experimental effects that have been seen for small devices. It additionally implies a non-Arhennius behavior in the extrapolation of MOSFET lifetime vs. substrate current. Accurate lifetime extrapolation requires the incorporation of this effect. Submitted by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-05-10T16:54:15Z No. of bitstreams: 1 2002_mcmahon.pdf: 2114587 bytes, checksum: 77671444b7885869b6da2b7da89e3ff0 (MD5) Made available in DSpace on 2012-05-10T16:54:15Z (GMT). No. of bitstreams: 1 2002_mcmahon.pdf: 2114587 bytes, checksum: 77671444b7885869b6da2b7da89e3ff0 (MD5) Previous issue date: 2002 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Megan O'Donnell (mnodonn2@illinois.edu) on 2012-05-10T16:54:15Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:33:03-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: dissertation/thesis changed dc.creator from Mcmahon, William Joseph to McMahon, William Joseph so it can be discovered with author's other materials in IDEALS. Changed by astein@illinois.edu on 2016/10/17 at 17:38pm CDT dissertation/thesis U of I Only Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.