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        <identifier>oai:www.ideals.illinois.edu:2142/31007</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Sinha, Sanjiv</dc:contributor>
          <dc:creator>Ma, Jun</dc:creator>
          <dc:date>2012-05-22T00:21:13Z</dc:date>
          <dc:date>2012-05-22T00:21:13Z</dc:date>
          <dc:date>2012-05</dc:date>
          <dc:date>2012-05-22T00:21:13Z</dc:date>
          <dc:date>2012-05</dc:date>
          <dc:description>Nanostructured single-crystal silicon exhibits a remarkable increase in the  gure of merit for
thermoelectric energy conversion. Here we theoretically and experimentally(partial) investigate a similar enhancement for polycrystalline silicon structured as an inverse opal. An inverse opal provides nanoscale grains and a thin- lm like geometry to scatter phonons preferentially over electrons. Using solutions to the Boltzmann transport equation for electrons and phonons, we show that the  gure of merit at 300 K is  fteen times that of bulk single-crystal silicon. Our models predict that grain boundaries are more e ective than surfaces in enhancing the figure of merit. We provide insight into this e ect and show that preserving a grain size smaller than the shell thickness of the inverse opal increases the  gure of merit by as much as 50% when the ratio between the two features is a third. At 600 K, the  figure of merit is as high as 0.6 for a shell thickness of 10 nm. We also measured the thermal conductivity of such nanostructures, and a more accurate thermal transport model is provided based on the experimental results.</dc:description>
          <dc:description>Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2012-04-21T16:31:31Z
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University of Illinois Theses &amp; Dissertations (ID: 1)
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          <dc:identifier>http://hdl.handle.net/2142/31007</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2012 Jun Ma</dc:rights>
          <dc:subject>Thermoelectrics</dc:subject>
          <dc:subject>Inverse opal</dc:subject>
          <dc:title>Thermoelectric properties of polysilicon inverse opals</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Mechanical Sci &amp; Engineering</department>
            <departmentCode>1917</departmentCode>
            <discipline>Mechanical Engineering</discipline>
            <disciplineCode>0133</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
            <program>PHD:Mechanical Enginerng -UIUC</program>
            <programCode>10KS0133PHD</programCode>
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