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        <datestamp>2023-07-10</datestamp>
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          <dc:date>2012-05</dc:date>
          <dc:contributor>Feng, Milton</dc:contributor>
          <dc:creator>Iverson, Eric</dc:creator>
          <dc:date>2012-05-22T00:21:52Z</dc:date>
          <dc:date>2012-05-22T00:21:52Z</dc:date>
          <dc:date>2012-05-22T00:21:52Z</dc:date>
          <dc:date>2012-05</dc:date>
          <dc:description>Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.</dc:description>
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University of Illinois Theses &amp; Dissertations (ID: 1)
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          <dc:language>en</dc:language>
          <dc:rights>Copyright 2012 Eric Iverson</dc:rights>
          <dc:subject>Indium Phospide (InP)</dc:subject>
          <dc:subject>double-heterojunction bipolar transistors (DHBT)</dc:subject>
          <dc:subject>Type-I</dc:subject>
          <dc:subject>Type-II</dc:subject>
          <dc:subject>Type-I/II</dc:subject>
          <dc:subject>Hot Electron</dc:subject>
          <dc:subject>Noise Figure</dc:subject>
          <dc:subject>Linearity</dc:subject>
          <dc:subject>third-order intercept point (IP3)</dc:subject>
          <dc:subject>Gain Compression</dc:subject>
          <dc:subject>Dynamic Range</dc:subject>
          <dc:title>Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical &amp; Computer Eng</department>
            <departmentCode>1933</departmentCode>
            <discipline>Electrical &amp; Computer Engr</discipline>
            <disciplineCode>1200</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
            <program>PHD:Electr &amp; Computer Eng-UIUC</program>
            <programCode>10KS1200PHD</programCode>
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