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Adams, James B. Richards, David Frank 2012-05-23T17:00:02Z 2012-05-23T17:00:02Z 10000-01-01 1999 Void formation due to electromigration is among the most significant reliability problems in the semiconductor industry. To help gain a better understanding of the atomistic processes involved in void formation under electromigration conditions we have used the Embedded Atom Method (BAM) to determine the structure and formation energies of small voids (up to 20 vacancies) in aluminum and copper both in bulk and at several special grain boundaries. We find that small voids at grain boundaries have a tendency to form diffuse clusters rather than voids with hollow cores. We also show that void energies are described qualitatively by a simple geometric model involving surface and grain boundary energies. We have used the results of our BAM calculations to guide the construction of a kinetic Monte Carlo (KMC) model of void nucleation and growth during electromigration. Our KMC code includes the effects of grain boundaries, grain boundary junctions, stress biased vacancy formation, current biased vacancy diffusion, and vacancy-void interactions. The code can simulate micron scale interconnects for time scales of seconds. We give a complete description of the KMC model and the rates for all events and demonstrate its potential with proof-of-principle calculations. Submitted by William Weathers (weathrs2@illinois.edu) on 2012-05-23T17:00:02Z No. of bitstreams: 1 1999_richards.pdf: 3996168 bytes, checksum: 36dcf70addf2a116d66e3fcf15f259db (MD5) Made available in DSpace on 2012-05-23T17:00:02Z (GMT). No. of bitstreams: 1 1999_richards.pdf: 3996168 bytes, checksum: 36dcf70addf2a116d66e3fcf15f259db (MD5) Previous issue date: 1999 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Weathers (weathrs2@illinois.edu) on 2012-05-23T17:00:02Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:34:42-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Thesis U of I Only http://hdl.handle.net/2142/31231 4266042 en Copyright 1999 David F. Richards atomistic model void nucleation electromigration reliability problems semiconductors Embedded Atom Method Kinetic Monte Carlo method Atomistic model of void nucleation and growth during electromigration Dissertation / Thesis text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.