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oai:www.ideals.illinois.edu:2142/31963 2023-07-10 col_2142_8888 col_2142_5131 com_2142_8887 com_2142_234 com_2142_5130

Ravaioli, Umberto Ravaioli, Umberto Choquette, Kent D. Tucker, John R. Jain, Kanti Mohamed, Mohamed 2012-06-27T21:21:44Z 2014-06-28T10:00:22Z 2012-05 2012-06-27T21:21:44Z 2012-05 The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement. Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2012-04-18T19:39:12Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) Made available in DSpace on 2012-06-27T21:21:44Z (GMT). No. of bitstreams: 2 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) license.txt: 4064 bytes, checksum: 612683d152f72bed269366caf8a8b01d (MD5) Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by William Ingram (wingram2@illinois.edu) on 2012-06-27T21:24:40Z Item is restricted until 2014-06-27T21:24:27Z Item reinstated by Sarah Shreeves (sshreeve@illinois.edu) on 2014-06-28T10:00:22Z Item was in collections: Dissertations and Theses - Electrical and Computer Engineering (ID: 446) Graduate Theses and Dissertations at Illinois (ID: 204) No. of bitstreams: 2 Mohamed_Mohamed.pdf: 2129309 bytes, checksum: 2406b710eba48360dc8e23c51974e0bd (MD5) license.txt: 4064 bytes, checksum: 612683d152f72bed269366caf8a8b01d (MD5) Item released from any restrictions by Sarah Shreeves (sshreeve@illinois.edu) on 2014-06-28T10:00:22Z http://hdl.handle.net/2142/31963 en Copyright 2012 Mohamed Mohamed Monte Carlo Multigate Self-heating Phonon transport Electron transport Short-channel Effects Quantum correction Multi-subband 3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD