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        <identifier>oai:www.ideals.illinois.edu:2142/34218</identifier>
        <datestamp>2023-07-10</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Chasiotis, Ioannis</dc:contributor>
          <dc:creator>Antartis, Dimitrios</dc:creator>
          <dc:date>2012-09-18T21:06:22Z</dc:date>
          <dc:date>2012-09-18T21:06:22Z</dc:date>
          <dc:date>2012-08</dc:date>
          <dc:date>2012-09-18T21:06:22Z</dc:date>
          <dc:date>2012-08</dc:date>
          <dc:description>The mean and gradient residual stresses and the failure behavior of individual
layers in inorganic thin film photovoltaics were investigated. The thin film photovoltaics
consisted of an amorphous silicon (Si) p-n junction diode, a zinc oxide (ZnO)
Transparent Conductive Oxide (TCO) layer (each 1μm thick), a Kapton® polyimide
layer acting as the bottom cathode and a thick aluminum substrate. Analysis of straight
blister delaminations in the p-n junction layer and telephone cord type delaminations in
the p-n junction-TCO bilayer provided the mean residual stress values in the Si
monolayer and the Si/ZnO bilayer, which were -466±118 MPa and -661±93 MPa,
respectively. High aspect ratio freestanding strips of the Si/ZnO bilayer and the Si
monolayer were used to determine the residual stress gradient using curvature
measurements. The stress gradient in the Si monolayer layer was 274±20 MPa/μm while
the stress gradient in the Si/ZnO bilayer resulted in a maximum tensile stress value of
360±27 MPa at the top of the ZnO layer and a maximum compressive stress of 319±24
MPa at the bottom surface of the Si layer. The monolayer and bilayer strips were also
subjected to uniaxial tension with a microscale tension apparatus to determine the failure
strength and the elastic modulus of each layer. The elastic modulus of the amorphous Si
monolayer was 94±6 GPa, which is in agreement with bulk values. The bilayer strips, had
an elastic modulus of 107±7 GPa which provided a value of 120±13 GPa for the Young’s
modulus of the ZnO layer, and tensile strength that was significantly lower than the Si
monolayer. These results indicated poor adhesion and load transfer between the
amorphous Si and the ZnO film and a mechanically weak ZnO film. Finally, proof of
concept experiments were conducted with photovoltaic cells attached to carbon fiber
composites, which showed extensive fragmentation of the thin film photovoltaics
occurring at small strains without though significant loss of functional performance of the
cells until ~3% strain in the composite laminate.</dc:description>
          <dc:description>Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2012-07-20T20:27:32Z
Item was in collections:
University of Illinois Theses &amp; Dissertations (ID: 1)
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          <dc:identifier>http://hdl.handle.net/2142/34218</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2012 Dimitrios Antartis. Portions Copyright 2005, Nature Materials, Copyright 2010, Solar Energy,
Copyright 2002, Physics of Solids.</dc:rights>
          <dc:subject>Thin film solar cells</dc:subject>
          <dc:subject>mechanical performance</dc:subject>
          <dc:title>Residual stresses and mechanical properties of thin film photovoltaic materials</dc:title>
          <degree>
            <department>Aerospace Engineering</department>
            <departmentCode>1615</departmentCode>
            <discipline>Aerospace Engineering</discipline>
            <disciplineCode>4048</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Thesis</level>
            <name>M.S.</name>
            <program>MS: Aerospace Engr -UIUC</program>
            <programCode>10KS4048MS</programCode>
          </degree>
        </thesis>
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