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        <identifier>oai:www.ideals.illinois.edu:2142/34560</identifier>
        <datestamp>2023-07-11</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Torrellas, Josep</dc:contributor>
          <dc:contributor>Torrellas, Josep</dc:contributor>
          <dc:contributor>Hwu, Wen-Mei W.</dc:contributor>
          <dc:contributor>Patel, Sanjay J.</dc:contributor>
          <dc:contributor>Shanbhag, Naresh R.</dc:contributor>
          <dc:contributor>Kim, Nam Sung</dc:contributor>
          <dc:contributor>Wilkerson, Chris</dc:contributor>
          <dc:creator>Karpuzcu, Rahmet</dc:creator>
          <dc:date>2012-09-18T21:25:37Z</dc:date>
          <dc:date>2012-09-18T21:25:37Z</dc:date>
          <dc:date>2014-09-18T10:01:02Z</dc:date>
          <dc:date>2012-08</dc:date>
          <dc:date>2012-09-18T21:25:37Z</dc:date>
          <dc:date>2012-08</dc:date>
          <dc:description>Ideal CMOS device scaling relies on scaling voltages down with lithographic
dimensions at every technology generation. This gives rise to faster circuits
due to higher frequency and smaller silicon area for the same functionality.
The dynamic power density - equivalently, dynamic power, if the chip area is
fixed - stays constant. Static power density, on the other hand, increases.  In
early generations, however, since the share of static power was practically
negligible, dynamic power density staying constant translated to total power
density staying constant.
This picture has changed recently. To keep the growth of the static power under
control, the decrease in the threshold voltage has practically stopped.  This,
in turn, has prevented the supply voltage from scaling.  The end effect is an
increasing power density over generations, giving rise to the power wall:
Processor chips can include more cores and accelerators than can be active at
any given time - and the situation is getting worse.  This effect, utilization
wall or dark silicon, as induced by the power wall, presents a fundamental
challenge that is transforming the many-core architecture landscape.
This dissertation attempts to address the key implication of the power wall
problem, dark silicon, in two novel and promising ways: By (1) trading off the
processor service life for power and performance - the BubbleWrap many-core, and
(2) exploring near-threshold voltage operation from an architectural perspective
- the Polyomino many-core. 
The BubbleWrap many-core assumes as many cores on chip as CMOS transistor
density scaling trends suggest, and exploits the resulting implicit redundancy
- as not all of the cores can be powered on simultaneously - to extract
maximum performance by trading off power and service life on a per-core basis.
To achieve this, BubbleWrap continuously tunes the supply voltage within the
course of each core's service life, leveraging any aging-induced guard-band
instantaneously left, rendering one of the following regimes of operation:
Minimize power at the same performance level and processor service life; attain
the highest performance for the same service life while respecting the given
power budget; or attain even higher performance for a shorter service life while
respecting the given power budget. Effectively, BubbleWrap runs each core at a
closer-to-optimal operating point by always aggressively using up all the
aging-induced guard-band that the designers have included - preventing any waste
of it.
  
Another way to dim dark silicon is reducing the supply voltage to a value only
slightly higher than the threshold voltage. This regime is called near-threshold
voltage (NTV) computing (NTC), as opposed to conventional super-threshold
voltage (STV) computing (STC).  A major drawback of NTC is the higher
susceptibility to parametric variations, namely the deviation of device
parameters from their nominal values.  To address parametric variations in
present and future NTV designs, this dissertation builds on an existing model of
variations at STV and develops the first architectural model of process
variations at NTV. Further, using the model, this dissertation demonstrates that
facilitating multiple on-chip voltage domains to handle parametric variations
will not be cost effective in near-future NTV designs. With this insight, this
dissertation introduces Polyomino, a simple many-core architecture which can
effectively cope with variations at NTV.  Polyomino eschews multiple voltage
domains and relies on fine-grain frequency domains to optimize execution under
variations.  Thanks to Polyomino's simplicity, a variation-aware scheduler can
effectively assign clusters of cores to jobs.</dc:description>
          <dc:description>Item withdrawn by Rebecca Bryant (rabryant@illinois.edu) on 2012-07-10T18:03:52Z
Item was in collections:
University of Illinois Theses &amp; Dissertations (ID: 1)
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Karpuzcu_Rahmet.pdf: 1368926 bytes, checksum: 67035e3e0e71f84807618177e8c3331b (MD5)</dc:description>
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Karpuzcu_Rahmet.pdf: 1368926 bytes, checksum: 67035e3e0e71f84807618177e8c3331b (MD5)
license.txt: 4064 bytes, checksum: 9c72e670ac8d3297c4d4aa0e7c0731c1 (MD5)</dc:description>
          <dc:description>Item marked as restricted to the 'Administrator' Group (id=1) by Seth Robbins (srobbins@illinois.edu) on 2012-09-18T21:27:30Z
Item is restricted until 2014-09-18T21:27:16Z</dc:description>
          <dc:description>Restriction data tranferred 2014-07-01T11:35:50-05:00
Original Data
Group with Access Administrator
Release Date: 2014-09-18 16:27:16 UTC
Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system</dc:description>
          <dc:description>Limited Restriction Lifted for Item 34834 on 2014-09-18T10:01:02Z.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/34560</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2012 Rahmet Ulya Karpuzcu</dc:rights>
          <dc:subject>Power constraints</dc:subject>
          <dc:subject>Dark silicon</dc:subject>
          <dc:subject>Near-threshold voltage</dc:subject>
          <dc:subject>Many-core architectures</dc:subject>
          <dc:subject>Process variations</dc:subject>
          <dc:subject>Static random-access memory (SRAM) fault models</dc:subject>
          <dc:subject>Wear-Out</dc:subject>
          <dc:title>Novel many-core architectures for energy-efficiency</dc:title>
          <degree>
            <department>Electrical &amp; Computer Eng</department>
            <departmentCode>1933</departmentCode>
            <discipline>Electrical &amp; Computer Engr</discipline>
            <disciplineCode>1200</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
            <program>PHD:Electr &amp; Computer Eng-UIUC</program>
            <programCode>10KS1200PHD</programCode>
          </degree>
        </thesis>
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