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          <dc:contributor>Chuang, Shun-Lien</dc:contributor>
          <dc:creator>Qiao, Pengfei</dc:creator>
          <dc:date>2012-09-18T21:26:40Z</dc:date>
          <dc:date>2012-09-18T21:26:40Z</dc:date>
          <dc:date>2014-09-18T10:00:56Z</dc:date>
          <dc:date>2012-08</dc:date>
          <dc:date>2012-09-18T21:26:40Z</dc:date>
          <dc:date>2012-08</dc:date>
          <dc:description>The InAs/GaSb type-II superlattices have drawn extensive research interest in the past few decades. The type-II band alignment in this material system provides a long cutoﬀ wavelength and a wide optical tunable range in the mid-infrared regime. Photodetectors based on type-II superlattices are theoretically predicted to surpass the performance of those based on the commercialized HgCdTe II-VI system. An electronic band structure model is formulated based on the 8-band k · p method. The absorption and quantum eﬃciency spectra are calculated, showing good agreement with experimental data. The interfacial eﬀect in type-II superlattices is investigated. It is shown that the interfacial layers can be employed not only to balance lattice strain and reduce detector dark current, but also to simultaneously increase the cutoﬀ wavelength and quantum eﬃciency. State-of-art interface controlled samples designed for comparison study are processed into devices. The device performance is characterized electrically by dark current measurements, and optically by Fourier transform infrared spectroscopy. Signiﬁcant improvement of device performance by interface control is demonstrated, which agrees with the prediction by the theoretical model.</dc:description>
          <dc:description>Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2012-07-17T17:26:40Z
Item was in collections:
University of Illinois Theses &amp; Dissertations (ID: 1)
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Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system</dc:description>
          <dc:description>Item marked as restricted to the 'Administrator' Group (id=1) by Seth Robbins (srobbins@illinois.edu) on 2012-09-18T21:27:36Z
Item is restricted until 2014-09-18T21:27:16Z</dc:description>
          <dc:description>Limited Restriction Lifted for Item 34857 on 2014-09-18T10:00:56Z.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/34583</dc:identifier>
          <dc:language>en</dc:language>
          <dc:rights>Copyright 2012 Pengfei Qiao</dc:rights>
          <dc:subject>Type-II superlattice</dc:subject>
          <dc:subject>Infrared Photodetectors</dc:subject>
          <dc:subject>Band structures</dc:subject>
          <dc:subject>k.p method</dc:subject>
          <dc:subject>Infrared spectroscopy</dc:subject>
          <dc:subject>Interfacial effect</dc:subject>
          <dc:title>Theory and experiments of type-II superlattice infrared photodetectors</dc:title>
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            <department>Electrical &amp; Computer Eng</department>
            <departmentCode>1933</departmentCode>
            <discipline>Electrical &amp; Computer Engr</discipline>
            <disciplineCode>1200</disciplineCode>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
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            <name>M.S.</name>
            <program>MS:Electr &amp; Computer Eng-UIUC</program>
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