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Therrien, Joel Mathew 2012-11-27T22:47:16Z 2012-11-27T22:47:16Z 10000-01-01 2002 We studied the electronic properties of silicon nanoparticles with sizes rang- ing from 2.9 to 1 nm in diameter. Using a scanning tunneling microscope we studied the electronic structure of the particles. Resonant tunneling through hole states was observed when the samples were excited with light. The energy levels of these hole states were matched to theoretical models and the mass of the holes was determined. In addition, the Coulomb blockade e ect was observed in the tunneling experiments. This e ect was used to determine the dielectric constant of the particles. Both the hole mass and the dielectric constant are of importance to many fields, such as electronics, optoelectronics, and optics, where silicon nanoparticles have applications. Submitted by Elias Lopez (erlopez2@illinois.edu) on 2012-11-27T22:47:16Z No. of bitstreams: 1 therrien.pdf: 7943217 bytes, checksum: 6e15685502a34d7c030403c28617e418 (MD5) Made available in DSpace on 2012-11-27T22:47:16Z (GMT). No. of bitstreams: 1 therrien.pdf: 7943217 bytes, checksum: 6e15685502a34d7c030403c28617e418 (MD5) Previous issue date: 2002 Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Elias Lopez (erlopez2@illinois.edu) on 2012-11-27T22:47:16Z Item is restricted indefinitely. Restriction data tranferred 2014-07-01T11:35:28-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Author has not yet granted open access permission Author has not yet granted open access permission U of I Only http://hdl.handle.net/2142/35264 en 200 Therrien © silicon nanoparticles electrical characteristics optoelectronics weak confinement strong confinement dielectric constant spectral spectral sensitivity STM tunneling mass model resonate tunneling Size Dependence of the Electrical Characteristics of Silicon Nanoparticles Bibliography text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.