2026-09-22T12:14:08Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/45391 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Li, Xiuling Miao, Xin 2013-08-22T16:38:48Z 2013-08-22T16:38:48Z 2013-08 2013-08-22T16:38:48Z 2013-08 Monolithically grown planar nanowire (NW) high electron mobility transistors (NW-HEMTs) have been demonstrated with self-aligned <110> planar GaAs NW channels capped by a thin film AlGaAs barrier. The planar NW-HEMTs exhibit uniform and scalable DC characteristics; and resolve the electrical non-uniformity issues in VLS grown NW-FETs with doped NW channels. Growth optimization through mapping the parameters of group III flow, V/III ratio and temperature has also been successfully done for the realization of high-quality down-scaled planar GaAs NWs with widths as small as 35 nm. With further development of our planar NW technology, wafer-scale low-power and high-speed VLSI circuits involving 3D planar NW channel from the bottom-up is promising. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-07-19T18:59:22Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Miao_Xin.pdf: 2247519 bytes, checksum: 1d94454975d3f21cfc26dc21419fbe9d (MD5) Made available in DSpace on 2013-08-22T16:38:48Z (GMT). No. of bitstreams: 2 Xin_Miao.pdf: 2247519 bytes, checksum: 1d94454975d3f21cfc26dc21419fbe9d (MD5) license.txt: 4056 bytes, checksum: 35ce9a055d64d5773536e511f109b5b4 (MD5) http://hdl.handle.net/2142/45391 en Copyright 2013 Xin Miao Gallium Arsenide (GaAs) planar nanowire High Electron Mobility Transistor (HEMT) III-V Very-large-scale integration (VLSI) micro-tube resonator Planar nanowire high electron mobility transistor and down-scaling of planar nanowire text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. PHD:Electr & Computer Eng-UIUC 10KS1200PHD