2026-09-22T03:23:44Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/45626 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Ravaioli, Umberto Jo, Michael 2013-08-22T16:55:50Z 2013-08-22T16:55:50Z 2015-08-22T10:00:41Z 2013-08 2013-08-22T16:55:50Z 2013-08 This thesis introduces a Monte Carlo simulation of intrinsic electronic noise in MOSFETs. Brief reviews of the important aspects of carrier transport, band structure, and Monte Carlo technique are discussed. Based on full band 2D Monte Carlo simulation, a noise analysis platform is utilized. To this end, accurate calculation of instantaneous current is done by employing the Ramo-Shockley technique. Then, we extract Y-parameters that include the information about the noise in a device. From these Y-parameters, we calculate the parameters of the small signal equivalent circuit model and finally model our device into noise two-port model. A 30 nm double gate FinFET is chosen as a simulation model and the intrinsic noise of the device is examined. As a result, the double gate FinFET showed lower gate and source access resistance, and minimum noise figure, which contains important information about the intrinsic noise characteristic. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-06-28T16:56:28Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 final_version_MichaelJothesis_MSthesis.tex: 54667 bytes, checksum: c3577a387bdc536239a419d2e7ef506b (MD5) Jo_Michael.pdf: 1511951 bytes, checksum: b1dd73703fcd5edfc1d9cd82e99dff3c (MD5) Made available in DSpace on 2013-08-22T16:55:50Z (GMT). No. of bitstreams: 3 Michael_Jo.pdf: 1511951 bytes, checksum: b1dd73703fcd5edfc1d9cd82e99dff3c (MD5) final_version_MichaelJothesis_MSthesis.tex: 54667 bytes, checksum: c3577a387bdc536239a419d2e7ef506b (MD5) license.txt: 4057 bytes, checksum: 51c629470cd1dfc80f1fc4aabd047eff (MD5) Restriction data tranferred 2014-07-01T11:36:25-05:00 Original Data Group with Access Administrator Release Date: 2015-08-22 11:57:26 UTC Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system Item marked as restricted to the 'Administrator' Group (id=1) by Seth Robbins (srobbins@illinois.edu) on 2013-08-22T16:57:32Z Item is restricted until 2015-08-22T16:57:26Z Limited Restriction Lifted for Item 45608 on 2015-08-22T10:00:41Z. http://hdl.handle.net/2142/45626 en Copyright 2013 Michael Jo Monte Carlo simulation intrinsic noise metal–oxide–semiconductor field-effect transistor (MOSFET) Monte Carlo simulation for high-frequency intrinsic noise analysis of MOSFET text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS