2026-09-21T06:03:05Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/46625 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Coleman, James J. Liudvih, Pavel 2014-01-16T17:56:38Z 2014-01-16T17:56:38Z 2013-12 2014-01-16T17:56:38Z 2013-12 In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators. SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-12-09T20:51:09Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Liudvih_Pavel.pdf: 1989784 bytes, checksum: 7ad449ed8dff3b3e24d5a9d624ba831d (MD5) Made available in DSpace on 2014-01-16T17:56:38Z (GMT). No. of bitstreams: 2 Pavel_Liudvih.pdf: 1232799 bytes, checksum: 126e7a90ea0cd3853bfa6cc149cf8b2d (MD5) license.txt: 4063 bytes, checksum: 0f656c6ac6f31fe242f31f9f562e01f7 (MD5) http://hdl.handle.net/2142/46625 en Copyright 2013 Pavel Liudvih Selective area epitaxy (SAE) Selective area growth (SAG) integrated modulator Metalorganic chemical vapor deposition (MOCVD) quantum well. Quantum well devices fabricated using selective area growth and their application in optical fiber communication text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS