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oai:www.ideals.illinois.edu:2142/49469 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Wasserman, Daniel M. Rosenberg, Aaron 2014-05-30T16:45:52Z 2014-05-30T16:45:52Z 2014-05 2014-05-30T16:45:52Z 2014-05 Doped semiconductors are investigated as a foundation for plasmonic waveguides and gratings in the mid-infrared. The potential applications of plasmonics to the MIR are reviewed, along with a brief derivation of a mathematical formalism for hybrid plasmonic waveguides which utilize both doped semiconductors and noble metals. A COMSOL Multiphysics model for these waveguides is demonstrated, with a high degree of automation. In addition, I demonstrate lateral control of carrier concentration in doped silicon, by patterning commercially available spin-on dopants down to the subwavelength scale. Samples are characterized by Fourier transform infrared spectroscopy and microscopy, surface profilometry, and infrared emissivity measurements. Samples show strong diffraction from 1D arrays of 'metal' lines patterned using the spin-on dopants. Item withdrawn by Alexis Thompson (athmpsn1@illinois.edu) on 2014-04-25T18:45:15Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Rosenberg_Aaron.pdf: 803292 bytes, checksum: 482e8fbed99466bd952ede2ac366fceb (MD5) Made available in DSpace on 2014-05-30T16:45:52Z (GMT). No. of bitstreams: 2 Aaron_Rosenberg.pdf: 803292 bytes, checksum: 482e8fbed99466bd952ede2ac366fceb (MD5) license.txt: 4065 bytes, checksum: 2f372318399b88434e36071785297579 (MD5) http://hdl.handle.net/2142/49469 en Copyright 2014 Aaron Rosenberg plasmonics composite materials mid-infrared semiconductor materials silicon photonics epsilon-near-zero plasmonic waveguides Highly doped semiconductors for plasmonic waveguides and flat-composite gratings text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Thesis M.S. MS:Electr & Computer Eng-UIUC 10KS1200MS