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oai:www.ideals.illinois.edu:2142/49650 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Feng, Milton Schutt-Ainé, José E. Dallesasse, John M. Goddard, Lynford L. Wu, Mong-Kai 2014-05-30T17:02:56Z 2014-05-30T17:02:56Z 2016-09-22T20:59:19Z 2014-05 2014-05-30T17:02:56Z 2014-05 An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting diode lasers (VCSELs) have achieved a data transmission rate of 25 Gbit/s per channel. However, the VCSEL bandwidth is limited by the slow recombination lifetime in the active region, which is the major challenge to transmitting at a data rate greater than 60 Gbit/s for a single VCSEL. To push the modulation speed, Purcell enhancement in the small volume and high Q cavity can be applied in microcavity VCSELs, enhancing the spontaneous recombination rate. In the first part of the dissertation we demonstrate that the microcavity VCSEL has a reduced recombination rate of 0.5 ns when the aperture size is less than 3 μm. With improved RF layout design and fabrication, we demonstrate a microcavity laser operating error-free at 40 Gbit/s. In the second part of the dissertation, we demonstrate the first vertical cavity transistor laser (VCTL) operation. Due to the dynamic charge transport in the active region, the transistor laser can achieve shorter carrier lifetime (~ 29 ps), making it especially suitable for high-speed lasers. We discuss the VCTL material and layout design, including how to reduce the parasitics via layout and process development. With three design iterations, we achieve a highly efficient VCTL. Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2013-12-09T20:12:35Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Wu_Mong-Kai.pdf: 4065131 bytes, checksum: cc10271c318fc91d6eef9df3091bf75d (MD5) Made available in DSpace on 2014-05-30T17:02:56Z (GMT). No. of bitstreams: 2 Mong-Kai_Wu.pdf: 4065131 bytes, checksum: cc10271c318fc91d6eef9df3091bf75d (MD5) license.txt: 4057 bytes, checksum: 57d959b6ecd4403707410d43a8c05221 (MD5) Restriction data tranferred 2014-07-01T11:38:10-05:00 Original Data Group with Access UIUC Users [automated] Release Date: 2016-05-30 12:09:03 UTC Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Seth Robbins (robbins.sd@gmail.com) on 2014-05-30T17:09:13Z Item is restricted until 2016-05-30T17:09:03Z U of I Only Restriction Lifted for Item 49701 on 2016-09-22T20:59:19Z. http://hdl.handle.net/2142/49650 en Copyright 2014 Mong-Kai Wu vertical cavity transistor laser microcavity laser surface-emitting vertical-cavity lasers energy efficient Development of vertical cavity transistor laser and microcavity laser text Electrical & Computer Eng 1933 Electrical & Computer Engr 1200 University of Illinois at Urbana-Champaign Dissertation Ph.D. PHD:Electr & Computer Eng-UIUC 10KS1200PHD