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Holonyak, Nick, Jr. Koehler, James S. Verdeyen, Joseph T. Streetman, B.G. Jordan, E.C. Scifres, Donald Ray 2014-06-06T16:20:02Z 2014-06-06T16:20:02Z 10000-01-01 1972-05 Submitted by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5) Made available in DSpace on 2014-06-06T16:20:02Z (GMT). No. of bitstreams: 1 1972_Scifres.pdf: 1983799 bytes, checksum: af0bafc6b6a5f1fddded6b4a13be36ac (MD5) Previous issue date: 1972-05 Restriction data tranferred 2014-07-01T11:27:14-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: Thesis Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Carly Hafner (chafner2@illinois.edu) on 2014-06-06T16:20:02Z Item is restricted indefinitely. Thesis U of I Only http://hdl.handle.net/2142/49910 3582715 ©1972 Donald Ray Scifres Nitrogen Properties of the Nitrogen Isoelectronic Trap in the III-V Semiconductor Alloys Gallium Arsenide Phosphide and Indium Gallium Phosphide Dissertation / Thesis text University of Illinois at Urbana-Champaign