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Rezek, Edward Anthony 2014-12-12T20:55:18Z 2014-12-12T20:55:18Z 10000-01-01 1980 1980 Since the development of practical semiconductor devices, most work has concentrated on changing the device geometry to suit particular design constraints. However, within the last several years there has been an attempt to build an entirely new class of devices by modifying the electronic str Made available in DSpace on 2014-12-12T20:55:18Z (GMT). No. of bitstreams: 1 8108637.pdf: 5486559 bytes, checksum: 9c1e13ca8c53ca667f1aea83d6af35d9 (MD5) Previous issue date: 1980 Embargo set by: Seth Robbins for item 66422 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 172 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980. http://hdl.handle.net/2142/66243 (UMI)AAI8108637 eng Engineering, Electronics and Electrical Liquid Phase Epitaxial Growth and Luminescence Characteristics of Indium Gallium Phosphide Arsenide - Indium Phosphide Quantum-Well Heterostructures text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.