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oai:www.ideals.illinois.edu:2142/69279 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Black, Robert Douglas 2014-12-15T19:04:42Z 2014-12-15T19:04:42Z 10000-01-01 1984 1984 The nature of 1/f noise in semiconductors and metals has been analyzed in light of the information provided by some unique, empirically determined parameters. Measurements of the instantaneous resistivity fluctuation isotropy, of the Hall noise magnitude and of the correlation between Hall noise and resistivity noise are presented. Results bearing on the Gaussian nature and the spatial coherence of 1/f noise are also given. The discovery of thermally activated spectral features in the noise from silicon-on-sapphire (SOS) samples is documented. A model for the origin of 1/f noise in SOS and one for that in bismuth are described. Possible generalizations of these findings are commented on. Made available in DSpace on 2014-12-15T19:04:42Z (GMT). No. of bitstreams: 1 8422021.pdf: 4803086 bytes, checksum: 70322314173ce3cb54d0bb239141ea46 (MD5) Previous issue date: 1984 Embargo set by: Seth Robbins for item 69445 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 185 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984. http://hdl.handle.net/2142/69279 (UMI)AAI8422021 Physics, Condensed Matter 1/f noise in semiconductors and metals text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.