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text Lepkowski, Thomas Richard 2014-12-15T19:04:52Z 2014-12-15T19:04:52Z 10000-01-01 1985 1985 A thorough background to the theoretical analysis of Hall effect carrier concentrations and mobilities in n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used to make measurements from 4.2 K to 373 K are described. The programming required both for the control of the measurements and the analysis of the data is discussed in detail. Results are presented for high purity n-type GaAs, InP and In(,0.53)Ga(,0.47)As. It was found that both the concentration and mobility may be accurately measured with the described system and both may be consistently and accurately modeled in some GaAs and InP samples. Because of possible inhomogeneity, other GaAs, InP and InGaAs samples cannot be accurately modeled even if such effects as deep donors, multiply charged acceptors, and depletion or accumulation of the surface or interface are included. Made available in DSpace on 2014-12-15T19:04:52Z (GMT). No. of bitstreams: 1 8511635.pdf: 10239264 bytes, checksum: 38147f38f367e928551bb5112a903abc (MD5) Previous issue date: 1985 Embargo set by: Seth Robbins for item 69467 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 363 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985. http://hdl.handle.net/2142/69301 (UMI)AAI8511635 Physics, Electricity and Magnetism Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect) Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.