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        <identifier>oai:www.ideals.illinois.edu:2142/69362</identifier>
        <datestamp>2023-07-11</datestamp>
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          <dc:creator>Miller, Robert Lewis</dc:creator>
          <dc:date>2014-12-15T19:05:19Z</dc:date>
          <dc:date>2014-12-15T19:05:19Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1987</dc:date>
          <dc:date>1987</dc:date>
          <dc:description>Power loss mechanisms are investigated in high-power SAW-based acoustoelectric devices on gallium arsenide. Power losses in reflective UHF SAW driving transducers often used in such devices are studied by a detailed coupled-mode model. The results of this model (which show excellent agreement with experimental data) indicate the finger resistance losses are the main problem, but that losses can be made quite low. A laser probe system, built for this work, is analyzed and used to provide much new information about unguided and guided pseudo-SAW propagation on nominally (100) cut. $$ propagating GaAs. Both measured data and analysis are provided. The feasibility of using acoustic guiding structures in high-power acoustoelectric devices is investigated, along with novel approaches to couple energy into the guides and to recirculate the acoustic power for as long as possible.</dc:description>
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8721717.pdf: 5498854 bytes, checksum: 2ad9ddee179d8d05df159d8860769826 (MD5)
  Previous issue date: 1987</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 69528
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
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          <dc:description>224 p.</dc:description>
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          <dc:identifier>http://hdl.handle.net/2142/69362</dc:identifier>
          <dc:identifier>(UMI)AAI8721717</dc:identifier>
          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:title>Efficiency Considerations in Narrow-Band Gallium-Arsenide Acoustoelectric Devices</dc:title>
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            <name>Ph.D.</name>
            <department>Electrical Engineering</department>
            <discipline>Electrical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
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