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oai:www.ideals.illinois.edu:2142/69376 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Lin, Wallace Wan-Li 2014-12-15T19:05:26Z 2014-12-15T19:05:26Z 10000-01-01 1987 1987 Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements. Two interface trap species were detected in all capacitors. Boron hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8 keV electron beam is removed. Higher trap generation rate, trap density and boron deactivation percentage were observed during irradiation in the oxide subjected to DI water rinse, no post-oxidation anneal (in Argon), or no post-metallization anneal (in forming gas). Results suggest that the two traps are due to intrinsic dangling bonds initially hydrogenated (Si-H or O-H) or strained (Si-O). The hydrogen bond model is further supported by a one-to-one experimental correlation between the annealing or hydrogenation of the interface traps and the hydrogenation of the boron acceptors. Made available in DSpace on 2014-12-15T19:05:26Z (GMT). No. of bitstreams: 1 8803118.pdf: 3598184 bytes, checksum: 1bba961086d9ba710043fde8da7fd898 (MD5) Previous issue date: 1987 Embargo set by: Seth Robbins for item 69542 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 117 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987. http://hdl.handle.net/2142/69376 (UMI)AAI8803118 Engineering, Electronics and Electrical Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.