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Stillman, Gregory E. Haase, Michael Albert 2014-12-15T19:05:34Z 2014-12-15T19:05:34Z 10000-01-01 1988 1988 A new technique has been developed to measure the conduction band discontinuities ($\Delta$E$\sb{\rm c})$ at certain semiconductor heterojunctions. The technique involves measuring the spectral response of specially designed p$\sp{+}$N$\sp{-}$ heterojunction photodiodes. Internal photoemission from the valence band of the p$\sp{+}$ layer is observed in these devices and power law fits are used to accurately extract the threshold energy. A simple calculation then gives the size of the conduction band heterobarrier. Subsequent analysis of small barrier lowering effects allows $\Delta$E$\sb{\rm c}$ to be deduced directly, accurately, and reliably. This technique has been applied to GaAs-Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As (x $>$ 0.5) heterojunctions at room temperature and to Ga$\sb{0.47}$In$\sb{0.53}$As-InP heterojunctions over a temperature range of 135 K to 300 K. The results and advantages of this technique are compared to previous experimental efforts. Made available in DSpace on 2014-12-15T19:05:34Z (GMT). No. of bitstreams: 1 8823138.pdf: 3511977 bytes, checksum: 8790cb3ec3b3dd27add121ce05649633 (MD5) Previous issue date: 1988 Embargo set by: Seth Robbins for item 69563 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 128 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988. http://hdl.handle.net/2142/69397 (UMI)AAI8823138 Engineering, Electronics and Electrical Internal Photoemission and Energy Band Discontinuities at Semiconductor Heterojunctions text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.