2026-09-21T17:15:30Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/69417 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

2014-12-15T19:05:41Z 10000-01-01 1988 2014-12-15T19:05:41Z Nordheden, Karen Jean 1988 The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results. Made available in DSpace on 2014-12-15T19:05:41Z (GMT). No. of bitstreams: 1 8908791.pdf: 1608018 bytes, checksum: 90d75b689f8c1406e6ed23a4c72437ef (MD5) Previous issue date: 1988 Embargo set by: Seth Robbins for item 69583 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 58 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988. http://hdl.handle.net/2142/69417 (UMI)AAI8908791 Engineering, Electronics and Electrical Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.