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Stillman, Gregory E. Reed, Andrew Dean 2014-12-15T19:05:42Z 2014-12-15T19:05:42Z 10000-01-01 1988 1988 Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor. L-optimal and D-optimal statistically designed experiments were used to determine the influence of 14 growth parameters on the donor and acceptor concentrations and the 77 K mobility of MOCVD grown GaAs. The source of the germanium impurity was found to be in the AsH$\sb3$ and it incorporates via a simple mechanism; the germanium donor concentration is directly proportional to the AsH$\sb3$ partial pressure and inversely proportional to the TMGa partial pressure. The source of the carbon impurity was found to be the TMGa molecule. There is a complex incorporation mechanism involving the loss of the first methyl radical from gas phase TMGa and the loss of the first hydrogen atom from AsH$\sb3$ adsorbed on the substrate surface. Made available in DSpace on 2014-12-15T19:05:42Z (GMT). No. of bitstreams: 1 8908811.pdf: 3089370 bytes, checksum: 561bb9a115b3f882601e8374862e0402 (MD5) Previous issue date: 1988 Embargo set by: Seth Robbins for item 69586 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 111 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988. http://hdl.handle.net/2142/69420 (UMI)AAI8908811 Engineering, Electronics and Electrical Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.