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Enloe, Jack Harrison 2014-12-16T19:16:57Z 2014-12-16T19:16:57Z 10000-01-01 1984 1984 Dense, polycrystalline films of Sn-doped In(,2)O(,3) were vapor deposited on yttria-stabilized zirconia solid electrolytes. Oxygen transport through the films was monitored between 1100 and 1300(DEGREES)K near atmospheric oxygen pressures using electrochemical techniques. An attempt was made to correlate the transport data to a diffusion model based on the defect chemistry of In(,2)O(,3); however, the evidence suggests that oxygen transport through these cells is controlled by the film-electrolyte interface. Low temperature electronic properties of the films were measured using the van der Pauw technique and were correlated to the tin content in the films. Finally, thermogravimetric and x-ray lattice parameter measurements were made on Sn-doped In(,2)O(,3) powder to provide additional support for the defect model. Made available in DSpace on 2014-12-16T19:16:57Z (GMT). No. of bitstreams: 1 8502135.pdf: 5160586 bytes, checksum: e3301395107ca568d9cb6562e206b89b (MD5) Previous issue date: 1984 Embargo set by: Seth Robbins for item 71871 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 185 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984. http://hdl.handle.net/2142/71705 (UMI)AAI8502135 Engineering, Chemical Oxygen Transport in Vapor-Deposited Tin-Doped Indium Oxide Films (Diffusion, Electrochemical) text Ceramics Engineering Ceramics Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.