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Barnett, Scott Alexander 2014-12-16T20:51:48Z 2014-12-16T20:51:48Z 10000-01-01 1982 1982 GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing. Made available in DSpace on 2014-12-16T20:51:48Z (GMT). No. of bitstreams: 1 8302799.pdf: 3331280 bytes, checksum: dfc558dba499f3ef9aaf494cc1c1679d (MD5) Previous issue date: 1982 Embargo set by: Seth Robbins for item 71959 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 104 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1982. http://hdl.handle.net/2142/71793 (UMI)AAI8302799 Engineering, Materials Science Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions text Metallurgy and Mining Engineering Metallurgical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.