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oai:www.ideals.illinois.edu:2142/71815 2023-07-11 col_2142_5131 col_2142_47053 com_2142_5130 com_2142_47052 com_2142_234

Coulman, Betty Ann 2014-12-16T20:51:59Z 2014-12-16T20:51:59Z 10000-01-01 1985 1985 The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic structure and impurity levels were analyzed. The film stresses in Pd(,2)Si layers grown at 250(DEGREES)C were determined for initial Pd thicknesses 50-750 (ANGSTROM). Made available in DSpace on 2014-12-16T20:51:59Z (GMT). No. of bitstreams: 1 8511600.pdf: 4492900 bytes, checksum: 9bff6d7bb9ae1ff0ccd4eca66d58309a (MD5) Previous issue date: 1985 Embargo set by: Seth Robbins for item 71981 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 153 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985. http://hdl.handle.net/2142/71815 (UMI)AAI8511600 Engineering, Materials Science X-Ray Diffraction Studies of Palladium-Silicide Thin Films text Metallurgy and Mining Engineering Metallurgical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.