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        <identifier>oai:www.ideals.illinois.edu:2142/71856</identifier>
        <datestamp>2023-07-11</datestamp>
        <setSpec>col_2142_5131</setSpec>
        <setSpec>col_2142_47053</setSpec>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Greene, J.E.</dc:contributor>
          <dc:creator>Fang, Shushan</dc:creator>
          <dc:date>2014-12-16T20:52:20Z</dc:date>
          <dc:date>2014-12-16T20:52:20Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1988</dc:date>
          <dc:date>1988</dc:date>
          <dc:description>A theory to calculate (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ pseudobinary phase diagrams was developed. Activities of zincblende-structure and diamond-structure (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ solid solutions were derived. Good agreements between experimental and theoretical results for GaAs-Ge, BaSb-Ge, and GaAs-Sn systems were obtained. A model was developed to predict zincblende to diamond phase transformation would occur at x$\sb{\rm c}$ = 0.26. Single-phase polycrystalline (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ films were grown by Rf-sputter deposition with x up to 0.06 for V$\sb{\rm s}$ (substrate bias) = 75 V, and up to 0.17 for V$\sb{\rm s}$ = 225 V. The reaction path of metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys followed the sequence: (1) metastable single phase, (2) GaAs rich and $\alpha$-Sn-rich phases, (3) $\alpha$-Sn transformed into $\beta$-Sn, and (4) $\beta$-Sn transformed into liquid. No single phase metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys were obtained by annealing amorphous ion-mixed GaAs/Sn multilayer films, and the reaction path followed the sequence: (1) amorphous, (2) mixtures of (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys, GaAs, $\beta$-Sn, and $\alpha$-Sn, (3) $\alpha$-Sn transformed into $\beta$-Sn, and (4) $\beta$-Sn transformed into the liquid phase.</dc:description>
          <dc:description>Made available in DSpace on 2014-12-16T20:52:20Z (GMT). No. of bitstreams: 1
8908676.pdf: 2675981 bytes, checksum: 8451b86608b83319b34754a96b744d49 (MD5)
  Previous issue date: 1988</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 72022
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:description>118 p.</dc:description>
          <dc:description>Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/71856</dc:identifier>
          <dc:identifier>(UMI)AAI8908676</dc:identifier>
          <dc:subject>Engineering, Materials Science</dc:subject>
          <dc:title>Thermodynamic and Kinetic Studies of (iii-V)(1-X)(iv(2))(x) Semiconducting Thin Films</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Metallurgy and Mining Engineering</department>
            <discipline>Metallurgical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
          </degree>
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