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Restle, Phillip John 2015-05-13T15:41:50Z 2015-05-13T15:41:50Z 10000-01-01 1986 1986 Properties of l/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential of the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on small (('(TURN))1(mu)m('2) surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for l/f noise in Si and GaAs are developed in light of these results. Made available in DSpace on 2015-05-13T15:41:50Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8610974.PDF: 4503444 bytes, checksum: 6f02922d389be342a2679215199890e9 (MD5) Previous issue date: 1986 Embargo set by: Seth Robbins for item 78599 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 143 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986. http://hdl.handle.net/2142/77388 (UMI)AAI8610974 eng Physics, Condensed Matter Low Frequency Noise in Semiconductors and Metals (Statistics, Gaussian (Noise) text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.