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oai:www.ideals.illinois.edu:2142/78307 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Wasserman, Daniel M. Wasserman, Daniel M. Yu, Lan 2015-07-22T22:15:45Z 2015-07-22T22:15:45Z 2015-05 2015-03-06 2015-5 In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots (QDs), and the advantages of QD-based optoelectronic devices are provided. The research presents our recent work demonstrating carrier con nement in quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) spectroscopy. The quantum confi nement is simulated by COMSOL. Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2015-07-22 without embargo terms The student, Lan Yu, accepted the attached license on 2015-02-03 at 13:33. The student, Lan Yu, submitted this Thesis for approval on 2015-03-05 at 09:42. This Thesis was approved for publication on 2015-03-06 at 10:38. DSpace SAF Submission Ingestion Package generated from Vireo submission #7705 on 2015-07-22 at 10:29:42 Made available in DSpace on 2015-07-22T22:15:45Z (GMT). No. of bitstreams: 3 Yu_Lan1.pdf: 3869675 bytes, checksum: 53666029a998d14f8663b4426fbac73f (MD5) Yu_Lan.rar: 4452256 bytes, checksum: 9a55be19784de4fd8961397b8ee840b4 (MD5) license.txt: 4054 bytes, checksum: 4986c1460da1d42322bb31191bdb0c58 (MD5) Previous issue date: 2015-03-06 application/pdf http://hdl.handle.net/2142/78307 Copyright 2015 Lan Yu III-V Semiconductor Light-emitting diode (LED) Quantum dots Nanolithographically defined semiconductor quantum dots text text Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Thesis M.S.