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oai:www.ideals.illinois.edu:2142/78768 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Li, Xiuling Li, Xiuling Lyding, Joseph W. Carney, Paul S. Dragic, Peter D Bassett, Kevin Paul 2015-07-22T22:45:47Z 2015-07-22T22:45:47Z 2017-07-23T09:15:25Z 2015-05 2015-04-22 Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined. Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2017-05-01 The student, Kevin Bassett, accepted the attached license on 2015-04-21 at 18:34. 2015-5 The student, Kevin Bassett, submitted this Dissertation for approval on 2015-04-21 at 18:46. This Dissertation was approved for publication on 2015-04-22 at 16:43. DSpace SAF Submission Ingestion Package generated from Vireo submission #8003 on 2015-07-22 at 14:26:02 Made available in DSpace on 2015-07-22T22:45:47Z (GMT). No. of bitstreams: 2 BASSETT-DISSERTATION-2015.pdf: 18239038 bytes, checksum: 0197b502a2f1ad21feffb89246351549 (MD5) LICENSE.txt: 4210 bytes, checksum: a9b0c79333bcda6d7a03cc40a8d3a9fe (MD5) Previous issue date: 2015-04-22 Embargo set by: Seth Robbins for item 80009 Lift date: 2017-07-22T22:46:21Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system Limited Restriction Lifted for Item 80009 on 2017-07-23T09:15:25Z. application/pdf http://hdl.handle.net/2142/78768 en Copyright 2015 Kevin Paul Bassett nanowire epitaxy metalorganic chemical vapor deposition (MOCVD) compound semiconductors Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells text text Electrical & Computer Eng Electrical & Computer Engr University of Illinois at Urbana-Champaign Dissertation Ph.D.