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Nayfeh, Munir H. Archer, Allan Phillip 2015-09-25T20:02:30Z 2015-09-25T20:02:30Z 10000-01-01 2001 2001 We present here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of the STM is varied. We focus here on that subset of field stress parameters yielding structures which specifically exhibit this conductivity change. Made available in DSpace on 2015-09-25T20:02:30Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3017014.pdf: 3115019 bytes, checksum: 51296e1e01643e51c6ca8764db1e41bd (MD5) Previous issue date: 2001 Embargo set by: Seth Robbins for item 81741 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 66 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001. http://hdl.handle.net/2142/80459 (MiAaPQ)AAI3017014 eng Physics, Condensed Matter Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.