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        <identifier>oai:www.ideals.illinois.edu:2142/80647</identifier>
        <datestamp>2023-07-11</datestamp>
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          <dc:contributor>Cooper, S. Lance</dc:contributor>
          <dc:creator>Dua, Praveen</dc:creator>
          <dc:date>2015-09-25T20:03:26Z</dc:date>
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          <dc:date>10000-01-01</dc:date>
          <dc:date>1997</dc:date>
          <dc:date>1997</dc:date>
          <dc:description>A characterization technique is developed to estimate the extent and shape of the spontaneously created composition modulation. The technique, based on resonant Raman spectroscopy, is general and can be utilized to map out composition regions in any semiconductor microstructure. Computer simulations were performed to confirm the validity of this technique.</dc:description>
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  Previous issue date: 1997</dc:description>
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Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
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          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:title>Optical Studies of Iii-V Quantum Wires Grown by Strain-Induced Lateral Ordering (Silo) Process</dc:title>
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            <grantor>University of Illinois at Urbana-Champaign</grantor>
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            <name>Ph.D.</name>
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