2026-09-19T20:00:14Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/80666 2023-07-11 col_2142_5131 col_2142_8859 com_2142_5130 com_2142_8858 com_2142_234

Made available in DSpace on 2015-09-25T20:03:31Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9921704.pdf: 3532216 bytes, checksum: d6159bd04f372d8389e2b6d995b4b7fe (MD5) Previous issue date: 1999 Adams, James B. Kilian, Karland Arthur 2015-09-25T20:03:31Z 2015-09-25T20:03:31Z 10000-01-01 1999 1999 We investigate two pathways for SiH3 incorporation into growing a-Si:H. It has been thought that growth proceeds by H abstraction by atomic H or SiH3. Recently, a mechanism of direct insertion of SiH3 into a surface Si-Si bond has been proposed to explain new IR data. We determine the activation energies for key steps in these pathways, and discuss the validity of each in light of our results. Embargo set by: Seth Robbins for item 81948 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 110 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. http://hdl.handle.net/2142/80666 (MiAaPQ)AAI9921704 eng Engineering, Electronics and Electrical Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.