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Ravaioli, Umberto Trellakis, Alexandros 2015-09-25T20:03:36Z 2015-09-25T20:03:36Z 10000-01-01 2000 2000 Finally, a full-band approach for the solution of Schrodinger's equation based on Fast Fourier Transforms is described. Using this simulation method, it becomes possible to solve Schrodinger's equation in the one band approximation for arbitrary band structures, putting a more complete description of high energy states and realistic temperatures within reach. Two example applications concerning non-parabolic effects in silicon quantum structures are presented, a MOS quantum capacitor and a MOS quantum cavity. Future directions for further extending this numerical method are discussed. Made available in DSpace on 2015-09-25T20:03:36Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9971207.pdf: 5330366 bytes, checksum: 4dd095e290a9eed514a5748347460697 (MD5) Previous issue date: 2000 Embargo set by: Seth Robbins for item 81965 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 125 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000. http://hdl.handle.net/2142/80683 (MiAaPQ)AAI9971207 eng Physics, Condensed Matter Computational Approaches to Silicon-Based Nanostructures text Physics Physics University of Illinois at Urbana-Champaign Dissertation Ph.D.