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Rosenbaum, Elyse Juliano, Patrick Alfred 2015-09-25T20:07:53Z 2015-09-25T20:07:53Z 10000-01-01 2001 2001 We also investigated LVTSCR structures fabricated in a commercial CMOS technology, including measuring the turn-on time of LVTSCR ESD protection devices. A circuit simulation macromodel for use in circuit simulation tools has also been incorporated into the Illinois Electrothermal Simulator (iETSIM). A complete discussion of SCRs as ESD protection devices and our measurement/modeling work is given herein. Made available in DSpace on 2015-09-25T20:07:53Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3023088.pdf: 4093881 bytes, checksum: 3769e49b1def4ad0ea07f30ab6633f81 (MD5) Previous issue date: 2001 Embargo set by: Seth Robbins for item 82015 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 165 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001. http://hdl.handle.net/2142/80733 (MiAaPQ)AAI3023088 eng Engineering, Electronics and Electrical Measurement, Modeling, and Simulation of Fast Transients in ESD Devices text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.