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Tucker, John R. Faulkner, Carl McCarty 2015-09-25T20:07:58Z 2015-09-25T20:07:58Z 10000-01-01 2001 2001 Long channel transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed. Made available in DSpace on 2015-09-25T20:07:58Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3030431.pdf: 1894444 bytes, checksum: 6640c82a3d1a9164fd7768f65af0af33 (MD5) Previous issue date: 2001 Embargo set by: Seth Robbins for item 82030 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 48 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001. http://hdl.handle.net/2142/80748 (MiAaPQ)AAI3030431 eng Engineering, Electronics and Electrical Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.